mar. 2001 3.5 0.2 2.2 0.2depth 3.5 0.2 2.2 0.2depth 75max 47 type name 26 0.5 0.4min 0.4min conditions applied for all conduction angles f = 60hz, sine wave = 180 , t f =76 c one half cycle at 60hz, t j =125 c i fm =500a, v r 2250v, t j = 125 c (see fig. 1, 2) (recommended value 23.5kn) typical 530g 785 500 10 4.2 10 5 2000 ?0 ~ 125 ?0 ~ 150 22 ~ 28 mitsubishi soft recovery diodes FD500JV-90DA high power, high frequency, press pack type FD500JV-90DA outline drawing dimensions in mm application clamp diode for gct thyristor high-power inverters power supplies as high frequency rectifiers ? i f(av) average forward current ....................... 500a ? v rrm repetitive peak reverse voltage ................... 4500v ? q rr reverse recovery charge ................. 1500 c ? press pack type rms forward current average forward current surge forward current current-squared, time integration critical rate of rise of reverse recovery current junction temperature storage temperature mounting force required weight a a ka a 2 s a/ s c c kn g i f(rms) i f(av) i fsm i 2 t d i /d t t j t stg unit symbol v rrm v rsm v r(dc) repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage parameter v v v symbol parameter unit ratings maximum ratings 4500 4500 3600 voltage class
mar. 2001 d i /d t = vd/l(line) = 2250v/1.125 h = 2000a (note 1) l(line) vd = 2250v gct l(load) fd500jv cd i cc : 6 f rc = 2 ? cc rc 0 ifm d i /d t (0~50%ifm) (note 1) 50%ifm 50%irm 90%irm q rr = (trr irm)/2 trr ta tb irm repetitive peak reverse current forward voltage reverse recovery charge reverse recovery loss soft recovery rate forward recovery voltage thermal resistance mitsubishi soft recovery diodes FD500JV-90DA high power, high frequency, press pack type i rrm v fm q rr erec tb/ta v fp r th(j-f) ma v c j/p v c/w symbol parameter test conditions limits min. typ. max. unit electrical characteristics v rm = 4500v, t j = 125 c i fm = 1570a, t j = 125 c i fm = 500a, d i /d t = 1000a/ s, v r = 2250v, t j = 125 c (see fig. 1, 2) d i /d t = 1000a/ s, t j = 25 c junction to fin 4.0 2 100 80 3.5 1500 0.027 fig. 1 (definition of reverse recovery waveform) fig. 2 (reverse recovery test circuit) note 1 in case of 2000a/ s, definition of d i /d t is by vd and inductance value of l (line) as follows. d i /d t = vd/l (line) = 2250v/1.125 h = 2000a/ s
mar. 2001 mitsubishi soft recovery diodes FD500JV-90DA high power, high frequency, press pack type performance curves 012345678 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0 200 400 600 800 1000 1200 6 8 10 2 4 5 7 9 1 3 0 0 23 10 ? 5710 ? 23 10 0 5710 1 23 5710 ? 23 5710 0 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.005 forward current (a) forward voltage (v) maximum forward characteristics forward current i f (a) erec vs if (typical) thermal impedance ( c/w) time (s) maximum thermal impedance characteristic (junction to fin) reverse recovery loss erec (j/p) 0 200 400 600 800 1000 1200 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 0 forward current i f (a) q rr vs if (typical) reverse recovery charge q rr ( c) t j = 125 c t j = 25 c condition vr = 2250v, t j =125 c d i /d t = 1000a/ s condition vr = 2250v, t j =125 c d i /d t = 1000a/ s
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